參數(shù)資料
型號: SI4505DY
廠商: Vishay Intertechnology,Inc.
英文描述: N- and P-Channel MOSFET
中文描述: N溝道和P溝道MOSFET
文件頁數(shù): 1/8頁
文件大?。?/td> 65K
代理商: SI4505DY
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Level Shift
Load Switch
Si4505DY
Vishay Siliconix
New Product
Document Number: 71826
S-20829—Rev. A, 17-Jun-02
www.vishay.com
1
N- and P-Channel MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.018 @ V
GS
= 10 V
0.027 @ V
GS
= 4.5 V
0.042 @ V
GS
= –4.5 V
0.060 @ V
GS
= –2.5 V
7.8
N-Channel
30
6.4
–5.0
P-Channel
–8
–4.0
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
2
G
2
G
1
S
1
D
2
D
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 sec.
Steady State
10 sec.
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
30
–8
Gate-Source Voltage
20
8
V
T
A
= 25 C
T
A
= 70 C
7.8
6.0
–5.0
–3.8
Continuous Drain Current
(T
J
= 150 C)
a, b
I
D
6.0
5.2
–3.6
–3.0
Pulsed Drain Current
I
DM
I
S
30
–30
A
Continuous Source Current (Diode Conduction)
a, b
1.8
1.0
–1.8
1.0
T
A
= 25 C
T
A
= 70 C
2
1.20
2
1.2
Maximum Power Dissipation
a, b
P
D
1.3
0.75
1.3
0.75
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
THERMAL RESISTANCE RATINGS
N-Channel
P- Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
t
10 sec
50
62.5
50
62.5
Maximum Junction-to-Ambient
a
Steady-State
R
thJA
85
105
85
105
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJF
30
40
30
40
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec
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