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參數(shù)資料
| 型號： | SI4425DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel, Logic Level, PowerTrenchTM MOSFET |
| 中文描述： | 11000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SI4425DY |
FEATURES
TrenchFET Power MOSFET
Advanced High Cell Density Process
APPLICATIONS
Load Switches
- Notebook PCs
- Desktop PCs
Si4425BDY
Vishay Siliconix
New Product
Document Number: 72000
S-21862—Rev. B, 21-Oct-02
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.012 @ V
GS
= -10 V
-11.4
-30
0.019 @ V
GS
= -4.5 V
- 9.1
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
- 11.4
-8.8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
- 9.1
-7.0
Pulsed Drain Current
I
DM
-50
A
continuous Source Current (Diode Conduction)
a
I
S
-2.1
-1.3
T
A
= 25 C
2.5
1.5
Maximum Power Dissipation
a
T
A
= 70 C
P
D
1.6
0.9
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
40
50
Maximum Junction-to-Ambient
a
Steady State
R
thJA
70
85
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
18
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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PDF描述 |
|---|---|
| SI4429EDY | P-Channel 30-V (D-S) MOSFET |
| SI4451DY | P-Channel 12-V (D-S) MOSFET |
| SI4462DY | N-Channel 200-V (D-S) MOSFET |
| SI4470EY | N-Channel 60-V (D-S) MOSFET |
| SI4470EY-T1 | N-Channel 60-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4425DY | 制造商:Vishay Siliconix 功能描述:MOSFET P SO-8 |
| SI4425DY-E3 | 功能描述:MOSFET 30V 11A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4425DY-T1 | 功能描述:MOSFET 30V 11A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4425DY-T1-E3 | 功能描述:MOSFET 30V 11A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4425DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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