參數(shù)資料
型號: SI4470EY-T1
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 60-V (D-S) MOSFET
中文描述: N通道60 - V(下局副局長)MOSFET的
文件頁數(shù): 1/4頁
文件大小: 41K
代理商: SI4470EY-T1
FEATURES
TrenchFET Power MOSFETS
Extended Temperature Range
APPLICATION
Primary Side Switch
Si4470EY
Vishay Siliconix
Document Number: 71606
S-03951—Rev. B, 26-May-03
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
60
0.011 @ V
GS
= 10 V
0.013 @ V
GS
= 6.0 V
12.7
11.7
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
Ordering Information:
Si4470EY
Si4470EY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
12.7
9.0
T
A
= 70 C
10.6
7.5
Pulsed Drain Current
I
DM
50
A
Avalanch Current
L = 0.1 mH
I
AS
50
Continuous Source Current (Diode Conduction)
a
I
S
3.1
1.5
Maximum Power Dissipation
a
T
A
= 25 C
P
D
3.75
1.85
W
T
A
= 70 C
2.6
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
33
40
Steady State
65
80
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
17
21
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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