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參數(shù)資料
| 型號： | SI4462DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 200-V (D-S) MOSFET |
| 中文描述： | N溝道200 -五（副）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SI4462DY |
FEATURES
TrenchFET Power MOSFET
PWM Optimized for Fast Switching
APPLICATIONS
Primary Side Switch
Si4462DY
Vishay Siliconix
New Product
Document Number: 72093
S-22098—Rev. A, 02-Dec-02
www.vishay.com
1
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.480 @ V
GS
= 10 V
0.510 @ V
GS
= 6.0 V
1.50
200
1.45
SO-8
S
D
S
D
S
D
G
D
5
6
7
8
Top View
2
3
4
1
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
200
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
1.50
1.15
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
1.20
0.92
Pulsed Drain Current
I
DM
5
A
Single Avalanch Current
I
AS
1.5
Single Avalanch Energy
L = 0.1 mH
E
AS
0.11
mJ
Continuous Source Current (Diode Conduction)
a
I
S
2.1
1.1
A
T
A
= 25 C
2.5
1.3
Maximum Power Dissipation
a
T
A
= 70 C
P
D
1.6
0.85
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
40
50
Maximum Junction-to-Ambient
a
Steady State
R
thJA
70
85
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
20
24
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4462DY_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET |
| SI4462DY-T1-E3 | 功能描述:MOSFET 200V 1.5A 2.5W 480mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4462DY-T1-GE3 | 功能描述:MOSFET 200V 1.5A 2.5W 480mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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