- 您現在的位置：買賣IC網 > PDF目錄365548 > SI4412ADY (Vishay Intertechnology,Inc.) Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PDF資料下載
參數資料
| 型號： | SI4412ADY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | SI4412ADY |
Si4412ADY
Vishay Siliconix
Document Number: 71105
S-03951—Rev. B, 26-May-03
www.vishay.com
2-1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.024 @ V
GS
= 10 V
0.035 @ V
GS
= 4.5 V
8
6.6
S
D
S
D
S
D
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
D
D
G
S
D
D
S
S
Ordering Information:
Si4412ADY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
8
5.8
T
A
= 70 C
6.4
4.6
A
Pulsed Drain Current (10 s Pulse Width)
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
2.3
1.2
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.3
W
T
A
= 70 C
1.6
0.8
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
45
50
Steady State
80
95
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
16
20
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關PDF資料 |
PDF描述 |
|---|---|
| SI4412ADY-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4412DY | Single N-Channel Logic Level PowerTrench MOSFET |
| SI4413DY | P-Channel 30-V (D-S) MOSFET |
| Si4420BDY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4420DY | N-channel enhancement mode field-effect transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4412ADY-E3 | 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4412ADY-T1 | 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4412ADYT1E3 | 制造商:Vishay Intertechnologies 功能描述: |
| SI4412ADY-T1-E3 | 功能描述:MOSFET 30V 8A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4412ADY-T1-GE3 | 功能描述:MOSFET 30V 8.0A 2.5W 24mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。