參數(shù)資料
型號(hào)： SI4420DY
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 12.5 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 1/1頁
文件大?。?/td> 92K
代理商： SI4420DY
Specification Comparison
Vishay Siliconix
Document Number 74060
06-May-05
www.vishay.com
Si4420BDY vs. Si4420DY
Description:
Package:
Pin Out:
Part Number Replacements:
Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3
Si4420BDY-T1-E3 Replaces Si4420DY-T1
Summary of Performance:
The Si4420BDY is the replacement to the original Si4420DY; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4420BDY
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
T
A
= 25
°
C
Continuous Drain Current
T
A
= 70
°
C
Pulsed Drain Current
I
DM
Continuous Source Current
(MOSFET Diode Conduction)
T
A
= 25
°
C
Power Dissipation
T
A
= 70
°
C
Operating Junction & Storage Temperature Range
T
j
& T
stg
Maximum Junction-to-Ambient
R
thJA
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
N-Channel, 30-V (D-S) MOSFET
SO-8
Identical
Si4420DY
30
+20
13.5
10.8
Unit
30
+20
13.5
10.8
V
I
D
50
2.3
50
2.7
I
S
A
2.5
1.6
3.0
1.9
P
D
W
-55 to 150
50
-55 to 150
42
°
C
°
C/W
Si4420BDY
Typ
Si4420DY
Typ
Parameter
Symbol
Min
Max
Min
Max
Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS(th)
I
GSS
I
DSS
I
D(on)
1.0
30
3.0
+100
1
1.0
30
2.0
3.0
+100
1
V
nA
μ
A
A
V
GS
= 10 V
V
GS
= 10 V
0.007
0.0085
0.0075
0.009
Drain-Source On-Resistance
V
GS
= 4.5 V
r
DS(on)
0.009
0.011
0.010
0.013
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
g
fs
V
SD
50
0.75
50
NS
S
V
1.1
1.1
Qg
Qgt
Qgs
Qgd
Rg
16
31
6.6
4.0
1.0
25
50
1.5
29
58
12
9.5
2.1
45
90
4.6
nC
0.5
0.5
t
d(on)
15
25
22
35
Turn-On Time*
t
r
11
18
13
20
t
d(off)
40
60
82
125
Turn-Off Time*
t
f
12
20
30
45
Source-Drain Reverse Recovery Time
t
rr
30
50
50
75
ns
NS denotes parameter not specified
相關(guān)PDF資料
PDF描述
Si4420DY N-Channel, 30-V (D-S) MOSFET
SI4420DY Single N-Channel Logic Level PowerTrencha MOSFET
SI4421DY P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI4423DY P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI4426DY N-Channel 20-V (D-S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4420DY,518 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4420DY 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI4420DY-E3 功能描述:MOSFET 30V 12.5A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4420DYHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 12.5A 8SOIC - Rail/Tube
SI4420DYPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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