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參數(shù)資料
| 型號： | Si4420BDY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 92K |
| 代理商： | SI4420BDY |
Specification Comparison
Vishay Siliconix
Document Number 74060
06-May-05
www.vishay.com
Si4420BDY vs. Si4420DY
Description:
Package:
Pin Out:
Part Number Replacements:
Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3
Si4420BDY-T1-E3 Replaces Si4420DY-T1
Summary of Performance:
The Si4420BDY is the replacement to the original Si4420DY; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4420BDY
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
T
A
= 25
°
C
Continuous Drain Current
T
A
= 70
°
C
Pulsed Drain Current
I
DM
Continuous Source Current
(MOSFET Diode Conduction)
T
A
= 25
°
C
Power Dissipation
T
A
= 70
°
C
Operating Junction & Storage Temperature Range
T
j
& T
stg
Maximum Junction-to-Ambient
R
thJA
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
N-Channel, 30-V (D-S) MOSFET
SO-8
Identical
Si4420DY
30
+20
13.5
10.8
Unit
30
+20
13.5
10.8
V
I
D
50
2.3
50
2.7
I
S
A
2.5
1.6
3.0
1.9
P
D
W
-55 to 150
50
-55 to 150
42
°
C
°
C/W
Si4420BDY
Typ
Si4420DY
Typ
Parameter
Symbol
Min
Max
Min
Max
Unit
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS(th)
I
GSS
I
DSS
I
D(on)
1.0
30
3.0
+100
1
1.0
30
2.0
3.0
+100
1
V
nA
μ
A
A
V
GS
= 10 V
V
GS
= 10 V
0.007
0.0085
0.0075
0.009
Drain-Source On-Resistance
V
GS
= 4.5 V
r
DS(on)
0.009
0.011
0.010
0.013
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
g
fs
V
SD
50
0.75
50
NS
S
V
1.1
1.1
Qg
Qgt
Qgs
Qgd
Rg
16
31
6.6
4.0
1.0
25
50
1.5
29
58
12
9.5
2.1
45
90
4.6
nC
0.5
0.5
t
d(on)
15
25
22
35
Turn-On Time*
t
r
11
18
13
20
t
d(off)
40
60
82
125
Turn-Off Time*
t
f
12
20
30
45
Source-Drain Reverse Recovery Time
t
rr
30
50
50
75
ns
NS denotes parameter not specified
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4420DY | N-channel enhancement mode field-effect transistor |
| Si4420DY | N-Channel, 30-V (D-S) MOSFET |
| SI4420DY | Single N-Channel Logic Level PowerTrencha MOSFET |
| SI4421DY | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI4423DY | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4420BDY_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4420BDY-T1-E3 | 功能描述:MOSFET 30V 13.5A 0.0085Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4420BDY-T1-GE3 | 功能描述:MOSFET 30V 13.5A 2.5W 8.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4420-D1-FT | 功能描述:射頻收發(fā)器 Tranceivers - IA4420 RoHS:否 制造商:Atmel 頻率范圍:2322 MHz to 2527 MHz 最大數(shù)據(jù)速率:2000 Kbps 調(diào)制格式:OQPSK 輸出功率:4 dBm 類型: 工作電源電壓:1.8 V to 3.6 V 最大工作溫度:+ 85 C 接口類型:SPI 封裝 / 箱體:QFN-32 封裝:Tray |
| SI4420-D1-FTR | 功能描述:射頻發(fā)射器 Transceiver EZRadio RoHS:否 制造商:Micrel 類型:ASK Transmitter 封裝 / 箱體:SOT-23-6 工作頻率:300 MHz to 450 MHz 封裝:Reel |
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