參數(shù)資料
型號: SI4022-A0-FT
廠商: Silicon Laboratories Inc
文件頁數(shù): 5/20頁
文件大?。?/td> 726K
描述: IC TX FSK UNI 868/915MHZ 16TSSOP
標(biāo)準(zhǔn)包裝: 96
頻率: 868MHz,915MHz
應(yīng)用: ISM
調(diào)制或協(xié)議: FSK
數(shù)據(jù)傳輸率 - 最大: 115.2kbps
功率 - 輸出: 6dBm
電流 - 傳輸: 24mA
數(shù)據(jù)接口: PCB,表面貼裝
天線連接器: PCB,表面貼裝
電源電壓: 2.2 V ~ 3.8 V
工作溫度: -40°C ~ 85°C
封裝/外殼: 16-TSSOP(0.173",4.40mm 寬)
包裝: 管件
5
Si4022
Symbol
Parameter
Conditions/Notes
Min
Typ
Max
Units
f
LO
 
Transmitter frequency
868 MHz band, 20 kHz resolution
915 MHz band, 20 kHz resolution
801.92
881.92
 
878.06
958.06
MHz
f
ref
PLL reference frequency
(Note 1)
9
10
11
MHz
f
res
PLL frequency resolution
 
 
20
 
kHz
t
lock
PLL lock time
Frequency error < 1kHz
after 1 MHz step
 
30
 
t
sp
PLL startup time
Initial calibration after power-up
with running crystal oscillator
 
 
500
C
xl
 
Crystal load capacitance,
see crystal selection guide
Programmable in 0.5 pF steps,
tolerance +/- 10%
8.5
 
16
pF
t
POR
 
Internal POR pulse width
(Note 2) 
After V
dd
 has reached 90% of
final value
 
50
100
ms
t
sx
 
Crystal oscillator startup time
Crystal ESR < 100 ?
 
2
5
ms
t
PBt
 
Wake-up timer clock period
Calibrated every 40 seconds
(Note 3)
0.995
1
1.005
ms
t
wake-up
 
Programmable wake-up time
 
1
 
8.4*10
6
 
ms
 
DC Characteristics (continued)
AC Characteristics
Note 1:
Note 1:
Note 1:
Note 1:
Note 1: Using anything but a 10 MHz crystal is allowed but not recommended because all crystal-referred timing and frequency
parameters will change accordingly.
Note 2:
Note 2:
Note 2:
Note 2:
Note 2:  No command are accepted by the chip during this period.
Note 3:
Note 3:
Note 3:
Note 3:
Note 3: Autocalibration can be turned off.
Symbol
Parameter
Conditions/Notes
Min
Typ
Max
Units
V
il
 
Digital input low level
 
 
 
0.3*V
dd
 
V
V
ih
 
Digital input high level
 
0.7*V
dd
 
 
 
V
Iil
Digital input current
Vil = 0 V
-1
 
1
礎(chǔ)
I
ih
 
Digital input current
V
ih
= V
dd
, V
dd
= 3.8 V
-1
 
1
礎(chǔ)
V
ol
 
Digital output low level
I
ol
= 2 mA
 
 
0.4
V
V
oh
 
Digital output high level
I
oh
= -2 mA
V
dd
-0.4
 
 
V
 
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