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參數(shù)資料
| 型號： | SI4022-A0-FT |
| 廠商： | Silicon Laboratories Inc |
| 文件頁數(shù)： | 4/20頁 |
| 文件大?。?/td> | 726K |
| 描述： | IC TX FSK UNI 868/915MHZ 16TSSOP |
| 標準包裝： | 96 |
| 頻率： | 868MHz，915MHz |
| 應用： | ISM |
| 調制或協(xié)議： | FSK |
| 數(shù)據(jù)傳輸率 - 最大： | 115.2kbps |
| 功率 - 輸出： | 6dBm |
| 電流 - 傳輸： | 24mA |
| 數(shù)據(jù)接口： | PCB，表面貼裝 |
| 天線連接器： | PCB，表面貼裝 |
| 電源電壓： | 2.2 V ~ 3.8 V |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 16-TSSOP（0.173"，4.40mm 寬） |
| 包裝： | 管件 |
4
Si4022
GENERAL DEVICE SPECIFICATION
All voltages are referenced to V
ss
, the potential on the ground reference pin VSS.
Absolute Maximum Ratings (non-operating)
Recommended Operating Range
ELECTRICAL SPECIFICATION
(Min/max values are valid over the whole recommended operating range, typ conditions: T
op
= 27
o
C; V
dd
= V
oc
= 2.7 V)
DC Characteristics
Note 1:
Note 1:
Note 1:
Note 1:
Note 1: Using a CR2032 battery (225 mAh capacity), the expected battery life is greater than 2 years using a 60-second wake-up period
for sending 100 bytes packets in length at 19.2 kbps with +6 dBm output power in the 915 MHz band.
Symbol
Parameter
Min
Max
Units
V
dd
Positive supply voltage
-0.5
6.0
V
V
in
Voltage on any pin
-0.5
V
dd
+0.5
V
I
in
Input current into any pin except VDD and VSS
-25
25
mA
ESD
Electrostatic discharge with human body model
1000
V
T
st
Storage temperature
-55
125
o
C
T
ld
Lead temperature (soldering, max 10 s)
260
o
C
Symbol
Parameter
Min
Max
Units
V
dd
Positive supply voltage
2.2
3.8
V
T
op
Ambient operating temperature
-40
+85
o
C
Symbol
Parameter
Conditions/Notes
Min
Typ
Max
Units
I
dd,TX0
Supply current
868 MHz band, P
out
= 0dBm
915 MHz band, P
out
= 0dBm
14
15
mA
I
dd,TXmax
Supply current
868 MHz band, P
out
= P
max
915 MHz band, P
out
= P
max
23
24
mA
I
pd
Standby current (Note 1)
all blocks disabled
1
礎
I
lb
Low battery voltage detector and
wake-up timer current
5
礎
I
x
Idle current
crystal oscillator is ON
0.5
mA
V
lb
Low battery detection threshold
programmable in 0.1 V steps
2.0
3.5
V
V
lba
Low battery detection accuracy
?0.05
V
V
POR
V
dd
threshold required
to generate a POR
1.5
V
V
POR,hyst
POR hysteresis
larger glithches on the V
dd
generate a POR even above
the threshold V
POR
0.6
V
SRVdd
Vdd slew rate
for proper POR generation
0.1
V/ms
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