參數(shù)資料
型號: SI3552DV
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: N- and P-Channel 30-V (D-S) MOSFET
中文描述: N和P溝道30V的(D-S)MOSFET
文件頁數(shù): 1/7頁
文件大?。?/td> 82K
代理商: SI3552DV
Si3552DV
Vishay Siliconix
New Product
Document Number: 70971
S-61831—Rev. A, 23-Aug-99
www.vishay.com FaxBack 408-970-5600
2-1
N- and P-Channel 30-V (D-S) MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
N-Channel
30
0.105 @ V
GS
= 10 V
2.5
0.175 @ V
GS
= 4.5 V
2.0
P-Channel
–30
0.200 @ V
GS
= –10 V
1.8
0.360 @ V
GS
= –4.5 V
1.2
D
1
G
1
S
1
N-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D2
G2
S1
S2
D1
G1
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
V
DS
30
–30
V
Gate-Source Voltage
V
GS
20
20
Continuous Drain Current
(T
J
= 150 C)
a, b
T
A
= 25 C
I
D
2.5
1.8
A
T
A
= 70 C
2.0
1.2
Pulsed Drain Current
I
DM
8
7
Continuous Source Current (Diode Conduction)
a, b
I
S
1.05
–1.05
Maximum Power Dissipation
a, b
T
A
= 25 C
P
D
1.15
W
T
A
= 70 C
0.73
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Symbol
Typical
Maximum
Unit
MaximumJunction-to-Ambient
Maximum Junction-to-Ambient
a
t
5 sec
R
thJA
93
110
C/W
Steady State
130
150
Maximum Junction-to-Lead
Steady State
R
thJL
75
90
Notes
a.
b.
Surface Mounted on FR4 Board.
t
5 sec
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SI3552DV_05 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET
SI3552DV_09 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET
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SI3552DV-T1-E3 功能描述:MOSFET 30V 2.5/1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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