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參數(shù)資料
| 型號： | SI3458DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60V（D-S）MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 55K |
| 代理商： | SI3458DV |
Si3458DV
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70859
S-61517—Rev. B, 12-Apr-99
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V
1
A
V
DS
= 48 V, V
GS
= 0 V, T
J
= 150 C
50
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
10
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 3.2 A
0.085
0.10
V
GS
= 4.5 V, I
D
= 2.8
A
0.110
0.13
Forward Transconductance
a
g
fs
V
DS
= 4.5
V, I
D
= 3.2 A
8
S
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 30 V V
V
GS
= 10 V, I
D
= 3.2 A
10 V I
3 2 A
8
16
Gate-Source Charge
Q
gs
4.0
nC
Gate-Drain Charge
Q
gd
2.0
Turn-On Delay Time
t
d(on)
V
= 30 ,
= 30
1 A V
1 A, V
GEN
= 10 V, R
G
= 6
10
20
Rise Time
t
r
I
D
10 V R
10
20
ns
Turn-Off Delay Time
t
d(off)
20
40
Fall Time
t
f
10
20
Source-Drain Rating Characteristics
b
Continuous Current
I
S
1.7
A
Pulsed Current
I
SM
15
Diode Forward Voltage
a
V
SD
I
S
= 1.7 A, V
GS
= 0 V
1.2
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, di/dt = 100 A/ s
50
90
ns
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
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參數(shù)描述 |
|---|---|
| SI3458DVT1 | 制造商:VISHAY 功能描述:60V 3.2A 2W |
| SI3458DV-T1 | 功能描述:MOSFET 60V 3.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3458DV-T1-E3 | 功能描述:MOSFET 60V 3.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3458DV-T1-GE3 | 功能描述:MOSFET 60V 3.2A 2.0W 100mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3459BDV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET |
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