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參數(shù)資料
| 型號： | SI3433DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | P通道的1.8 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SI3433DV |
Si3433
Vishay Siliconix
New Product
Document Number: 71160
S-00624—Rev. A, 03-Apr-00
www.vishay.com
2-1
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.042 @ V
GS
= -4.5 V
-5.6
-20
0.057 @ V
GS
= -2.5 V
-4.8
0.080 @ V
GS
= -1.8 V
-4.1
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-5.6
-4.3
T
A
= 85 C
-4.1
-3.1
A
Pulsed Drain Current
I
DM
-20
Continuous Diode Current (Diode Conduction)
a
I
S
-1.7
-0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
W
T
A
= 85 C
1.0
0.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
45
62.5
Steady State
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
25
30
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI3433DV-T1 | 功能描述:MOSFET 20V 4.3A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3433DV-T1-E3 | 功能描述:MOSFET 20V 4.3A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3434DV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI3434DV-T1 | 功能描述:MOSFET 30V 6.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3434DV-T1-E3 | 功能描述:MOSFET 30V 6.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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