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參數(shù)資料
| 型號： | SI3440DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 150-V (D-S) MOSFET |
| 中文描述： | N溝道150V（D-S）MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 77K |
| 代理商： | SI3440DV |
FEATURES
TrenchFET Power MOSFET
PWM Optimized for Fast Switching In Small
Footprint
100% R
g
Tested
APPLICATIONS
Primary Side Switch for Low Power DC/DC
Converters
Si3440DV
Vishay Siliconix
New Product
Document Number: 72380
S-32412—Rev. B, 24-Nov-03
www.vishay.com
1
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
150
0.375 @ V
GS
= 10 V
0.400 @ V
GS
= 6.0 V
1.5
1.4
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information: Si3440DV-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
150
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 175 C)
a
T
A
= 25 C
I
D
1.5
1.2
T
A
= 85 C
1.1
0.8
A
Pulsed Drain Current
I
DM
6
Single Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
4
Single Avalanche Energy (Duty Cycle
1%)
E
AS
0.8
mJ
Continuous Source Current (Diode Conduction)
a
I
S
1.7
1.0
A
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.14
W
T
A
= 85 C
1.0
0.59
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
45
62.5
Steady State
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
25
30
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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| SI3441 | P-Channel 2.5V Specified PowerTrench MOSFET |
| SI3441DV | RELAY SSR SPST 350V 120MA 6-SOP |
| SI3442BDV-T1-E3 | N-Channel 2.5-V (G-S) MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3440DV_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) MOSFET |
| SI3440DV-T1 | 制造商:Vishay Intertechnologies 功能描述:TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,1.2A I(D),TSOP |
| SI3440DV-T1-E3 | 功能描述:MOSFET 150V 1.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3440DV-T1-GE3 | 功能描述:MOSFET 150V 1.5A 2.0W 375mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3441 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench MOSFET |
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