參數(shù)資料
型號: SI3441BDV
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel 2.5-V (G-S) MOSFET
中文描述: P通道的2.5 V(GS)的MOSFET的
文件頁數(shù): 1/5頁
文件大?。?/td> 46K
代理商: SI3441BDV
Si3441BDV
Vishay Siliconix
New Product
Document Number: 72028
S-03669—Rev. B, 07-Apr-03
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-20
0.090 @ V
GS
= -4.5 V
-2.9
0.130 @ V
GS
= -2.5 V
-2.45
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-2.9
-2.45
T
A
= 70 C
-2.35
-1.95
A
Pulsed Drain Current
I
DM
-16
Continuous Diode Current (Diode Conduction)
a
I
S
-1.0
-0.72
Maximum Power Dissipation
a
T
A
= 25 C
P
D
1.25
0.86
W
T
A
= 70 C
0.8
0.55
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
80
100
Steady State
120
145
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
70
85
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
For SPICE model information via the Worldwide Web: http://www. vishay.com/www/product/spice.htm.
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