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參數(shù)資料
| 型號： | SI3056DC1-EVB |
| 廠商： | Silicon Laboratories Inc |
| 文件頁數(shù)： | 82/94頁 |
| 文件大?。?/td> | 0K |
| 描述： | DAUGHTERCARD DAA SI3056/SI3019 |
| 標準包裝： | 1 |
| 主要目的： | 電信，數(shù)據(jù)采集裝置（DAA） |
| 已用 IC / 零件： | Si3056 |
| 已供物品： | 板，CD |
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Rev. 1.05
83
Si3056
Si3018/19/10
APPENDIX—UL1950 3RD EDITION
Although designs using the Si3056 comply with the
UL1950 3rd edition and pass all overcurrent and
overvoltage tests, there are still several issues to
consider.
Figure 37 shows two designs that can pass the UL1950
overvoltage tests and electromagnetic emissions. The
top schematic shows the configuration in which the
ferrite beads (FB1 and FB2) are on the unprotected side
of the sidactor (RV1). For this configuration, the current
rating of the ferrite beads needs to be 6 A. However, the
higher current ferrite beads are less effective in
reducing electromagnetic emissions.
The bottom schematic of Figure 37 shows the
configuration in which the ferrite beads (FB1 and FB2)
are on the protected side of the sidactor (RV1). For this
design, the ferrite beads can be rated at 200 mA.
In a cost-optimized design, compliance to UL1950 does
not always require overvoltage tests. Plan ahead to
know which overvoltage tests apply to the system.
System-level elements in the construction, such as fire
enclosure and spacing requirements, need to be
considered during the design stages. Consult with a
professional testing agency during the design of the
product to determine which tests apply to the system.
Figure 37. Circuits that Pass all UL1950 Overvoltage Tests
RV1
C8
FB1
FB2
TIP
RING
TIP
RING
FB1
FB2
75
@ 100 MHz, 6 A
75
@ 100 MHz, 6 A
600
at 100 MHz, 200 mA
600
at 100 MHz, 200 mA
C9
1.25 A
C8
C9
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