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參數(shù)資料
| 型號： | SI3014-KS |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT |
| 中文描述： | 3.3伏催化裂化/ JATE直接訪問安排 |
| 文件頁數(shù)： | 5/54頁 |
| 文件大?。?/td> | 1407K |
| 代理商： | SI3014-KS |
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Si3035
Rev. 1.2
5
Table 3. DC Characteristics, V
D
= +5 V
(V
A
= +5 V ±5%, V
D
= +5 V ±5%, T
A
= 0 to 70°C for K-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
High Level Input Voltage
V
IH
3.5
—
—
V
Low Level Input Voltage
V
IL
—
—
0.8
V
High Level Output Voltage
V
OH
I
O
= –2 mA
3.5
—
—
V
Low Level Output Voltage
V
OL
I
O
= 2 mA
—
—
0.4
V
Input Leakage Current
I
L
–10
—
10
μA
Power Supply Current, Analog
I
A
V
A
pin
—
0.3
1
mA
Power Supply Current, Digital
1
I
D
V
D
pin
—
14
18
mA
Total Supply Current, Sleep Mode
1
I
A
+ I
D
PDN = 1, PDL = 0
—
1.3
2.5
mA
Total Supply Current, Deep Sleep
1,2
I
A
+ I
D
PDN = 1, PDL = 1
—
0.04
0.5
mA
Notes:
1.
All inputs at 0.4 or V
D
– 0.4 (CMOS levels). All inputs held static except clock and all outputs unloaded
(Static I
OUT
= 0 mA).
2.
RGDT is not functional in this state.
Table 4. DC Characteristics, V
D
= +3.3 V
(V
A
= Charge Pump, V
D
= +3.3 V ± 0.3 V, T
A
= 0 to 70°C for K-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
High Level Input Voltage
V
IH
2.0
—
—
V
Low Level Input Voltage
V
IL
—
—
0.8
V
High Level Output Voltage
V
OH
I
O
= –2 mA
2.4
—
—
V
Low Level Output Voltage
V
OL
I
O
= 2 mA
—
—
0.35
V
Input Leakage Current
I
L
–10
—
10
μA
Power Supply Current, Analog
1,2
I
A
V
A
pin
—
0.3
1
mA
Power Supply Current, Digital
3
I
D
V
D
pin
—
9
12
mA
Total Supply Current, Sleep Mode
3
I
A
+ I
D
PDN = 1, PDL = 0
—
1.2
2.5
mA
Total Supply Current, Deep Sleep
3,4
I
A
+ I
D
PDN = 1, PDL = 1
—
0.04
0.5
Power Supply Voltage, Analog
1,5
V
A
Charge Pump On
4.3
4.6
5.00
V
Notes:
1.
Only a decoupling capacitor should be connected to V
A
when the charge pump is on.
2.
There is no I
A
current consumption when the internal charge pump is enabled and only a decoupling cap is connected
to the V
A
pin.
3.
All inputs at 0.4 or V
D
– 0.4 (CMOS levels). All inputs held static except clock and all outputs unloaded
(Static I
OUT
= 0 mA).
4.
RGDT is not functional in this state.
5.
The charge pump is recommended to be used only when V
D
< 4.5 V. When the charge pump is not used, V
A
should be
applied to the device before V
D
is applied on power up if driven from separate supplies.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI3014-KT | 3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT |
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| SI3021 | 3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT |
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|---|---|
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| SI3015-BS | 功能描述:電信線路管理 IC CONTACT SILICON LABS FOR AVAILABILITY RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray |
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