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參數(shù)資料
| 型號： | SI1024X |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 20-V (D-S) MOSFET |
| 中文描述： | 雙N溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 49K |
| 代理商： | SI1024X |
Si1024X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71170
S-03104
—
Rev. A, 08-Feb-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
4.5
V
0.5
1.0
A
V
DS
= 16 V, V
GS
= 0 V
0.3
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 C
5
A
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
700
mA
V
GS
= 4.5 V, I
D
= 600 mA
0.41
0.70
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 500 m A
0.53
0.85
V
GS
= 1.8 V, I
D
= 350 m A
0.70
1.25
Forward Transconductance
a
g
fs
V
DS
= 10
V, I
D
= 400 mA
1.0
S
Diode Forward Voltage
a
V
SD
I
S
= 150 mA, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
750
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 250 mA
75
pC
Gate-Drain Charge
Q
gd
225
Turn-On Time
t
ON
V
= 10 V, R
= 47
200 mA, V
GEN
= 4.5 V, R
G
= 10
10
Turn-Off Time
t
OFF
I
D
36
ns
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
200
400
600
800
1000
1200
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 5 thru 1.8 V
T
C
=
–
55 C
125 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
V
GS
–
Gate-to-Source Voltage (V)
1 V
I
D
-
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1024X_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 20-V (D-S) MOSFET |
| SI1024X-T1 | 功能描述:MOSFET 20V 0.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1024X-T1-E3 | 功能描述:MOSFET 20V 0.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1024X-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI1024X-T1-GE3 | 功能描述:MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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