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參數(shù)資料
| 型號： | SA7026 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | 1.3GHz low voltage fractional-N dual frequency synthesizer |
| 中文描述： | 1.3GHz的低電壓小數(shù)N頻率合成器雙 |
| 文件頁數(shù)： | 6/18頁 |
| 文件大小： | 299K |
| 代理商： | SA7026 |
Philips Semiconductors
Product specification
SA7026
1.3GHz low voltage fractional-N dual synthesizer
1999 Nov 04
6
CHARACTERISTICS
(continued)
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Phase noise (condition R
SET
= 7.5 k
, CP = 00)
Synthesizer’s contribution to close-in phase noise
of 900 MHz RF signal at 1 kHz offset.
GSM
f
REF
= 13MHz, TCXO,
f
COMP
= 1MHz
indicative, not tested
–
–90
–
dBc/Hz
(f)
Synthesizer’s contribution to close-in phase noise
of 800 MHz RF signal at 1 kHz offset.
TDMA
f
REF
= 19.44MHz, TCXO,
f
COMP
= 240kHz
indicative, not tested
–
–85
–
dBc/Hz
Interface logic input signal levels; pins 2, 17, 18, 19, 20
V
IH
HIGH level input voltage
0.7*V
DD
–
V
DD
+0.3
V
V
IL
LOW level input voltage
–0.3
–
0.3*V
DD
V
I
LEAK
Input leakage current
logic 1 or logic 0
–0.5
–
+0.5
μ
A
Lock detect output signal (in push/pull mode); pin 1
V
OL
LOW level output voltage
I
sink
= 2 mA
–
–
0.4
V
V
OH
HIGH level output voltage
I
source
= –2 mA
V
DD
–0.4
–
–
V
NOTES:
1. I
SET =
V
SET
R
SET
bias current for charge pumps.
2. The relative output current variation is defined as:
I
OUT
I
OUT
2
.
(I
2
–I
1
)
I(I
2
I
1
)I; with V
1
0.7V, V
2
V
DDCP
–0.8V (See Figure 3.)
I
2
I
1
I
2
I
1
V
1
V
2
CURRENT
V
PH
SR00602
I
ZOUT
Figure 3.
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|---|---|
| SA7026DH | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:1.3GHz low voltage fractional-N dual frequency synthesizer |
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| SA702N | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Divide by: 64/65/72 triple modulus low power ECL prescaler |
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