參數(shù)資料
型號(hào): SA600D
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 衰減器
英文描述: 1GHz LNA and mixer
中文描述: 800 MHz - 1200 MHz RF/MICROWAVE DOUBLE BALANCED MIXER
文件頁(yè)數(shù): 7/17頁(yè)
文件大?。?/td> 283K
代理商: SA600D
Philips Semiconductors
Product specification
NE/SA600
1GHz LNA and mixer
1993 Dec 15
53
LNA OVERLOAD/NOISE/DISTORTION CHARACTERISTICS
4.5V
V
CC
= V
CCMX
5.5V, Test Fig. 1, unless otherwise specified.
800
FREQUENCY (MHz)
LNA Input 1dB Gain Compression Point vs Frequency
0
P
900
1000
1100
1200
–5
–10
–15
–20
–25
–30
–40
TEMPERATURE (
°
C)
LNA Input 1dB Gain Compression Point vs Temperature
0
P
–5
–10
–15
–20
–25
–30
–20
0
20
40
60
80
100
800
FREQUENCY (MHz)
LNA 50
Noise Figure vs Frequency
3
N
900
1000
1100
1200
2.5
2
1.5
1
0.5
0
LNA 50
Noise Figure vs Temperature
3
N
2.5
2
1.5
1
0.5
0
–40
TEMPERATURE (
°
C)
–20
0
20
40
60
80
100
F = 900MHz
800
FREQUENCY (MHz)
LNA Input Third-Order Intercept vs Frequency
0
I
900
1000
1100
1200
–2
–4
–6
–8
–10
–12
–14
–16
–18
–20
F2 = F1 + 100kHz
LNA Input Third-Order Intercept vs Temperature
0
I
–2
–4
–6
–8
–10
–12
–14
–16
–18
–20
F1 = 900MHz
F2 = 900.1MHz
–40
TEMPERATURE (
°
C)
–20
0
20
40
60
80
100
SR00087
TEST FIGURE 2
TEST FIGURE 2
Figure 6. LNA Overload/Noise/Distortion Performance Characteristics
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