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參數(shù)資料
| 型號(hào)： | SA600D |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | 1GHz LNA and mixer |
| 中文描述： | 800 MHz - 1200 MHz RF/MICROWAVE DOUBLE BALANCED MIXER |
| 文件頁(yè)數(shù)： | 11/17頁(yè) |
| 文件大小： | 283K |
| 代理商： | SA600D |
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Philips Semiconductors
Product specification
NE/SA600
1GHz LNA and mixer
1993 Dec 15
57
OVERALL PERFORMANCE: ISOLATION CHARACTERISTICS
4.5
≤
V
CC
= V
CCMX
≤
5.5V, Test Fig. 1, unless otherwise specified
Isolation From LNA Output to Mixer
RF Input vs Frequency
0
800
FREQUENCY (MHz)
I
ENABLE=HI
ENABLE=LO
–10
–20
–30
–40
–50
–60
900
1000
1100
1200
Isolation From LO vs Frequency
0
800
FREQUENCY (MHz)
I
At LNA input – ENABLE = LO
–10
–20
–30
–40
–50
–60
900
1000
1100
1200
At LNA input – ENABLE = HI
At Mixer RF input
SR00091
Figure 10. Overall Performance: Isolation Characteristics
SPECIFICATIONS
The goal of the Specifications section of the datasheet is to provide
information on the NE/SA600 in such a way that the designer can
estimate statistical variations, and can reproduce the
measurements. To this end the high frequency measurements are
specified with a particular PC board layout. Variations in board
layout will cause parameter variations (sensitive parameters are
discussed in the sections on the LNA and mixer below). For many
RF parameters the
±
3 sigma limits are specified. Statistically only
0.26% of the units will be outside these limits.
The LNA + mixer conversion gain is measured with an incident
900MHz signal and a 83MHZ SAW filter at the IF output. This
measurement along with a gain measurement of the LNA ensure the
correct operation of the chip and also allows a calculation of mixer
conversion gain.
PIN DESCRIPTIONS AND OPERATIONAL LIMITS
RF
INA
Input of LNA, AC coupling required, DC = 0.78V, frequency range
from DC to 2GHz, gain at low frequencies is 40dB — so be careful
of overload, impedance below 50
, shunt 15-18nH inductor helps
input match and noise figure.
RF
OUTA
Output of LNA, AC coupling required, DC = 1.27V, frequency range
from DC to 2GHz, impedance above 50
.
BYPASS
Bypass capacitor should be 100 times larger than the largest signal
coupling capacitor for the LNA, DC = 1.05V.
RF
INMX
Mixer RF port, AC coupling required, DC = 1.43V, frequency range
from 100MHz to 2.5GHz, impedance close to 50
resistive.
LO
IN
Mixer LO port, AC coupling required, DC=3.35V, frequency range
from 100MHz to 2.5GHz, impedance close to 50
resistive.
IF
OUT
Mixer IF port, open-collector output with 1.6mA DC, frequency range
DC to 1GHz, impedance approximately 1pF capacitive.
Enable
TTL/CMOS compatible input. Bias current approximately zero.
CONVERSION GAIN DEFINITIONS
Referring to the figure above, we define the ratio of V
A
(at the IF
frequency) to V
I
(at the RF frequency) to be the Available Voltage
Conversion Gain, or more simply Voltage Conversion Gain,
V
O
10
μ
H
R
L1
1k
IF FILTER
LO
RF
V
I
V
A
R
L2
SR00092
Figure 11.
VG
C
20log
V
A
V
I
where V
A
and V
I
are expressed in similar voltage units (such as
peak-to-peak). The voltage output V
A
is decreased by the IF Filter
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相關(guān)代理商/技術(shù)參數(shù) |
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| SA-600R-112 | 制造商:Samlex America 功能描述:600W Heavy Duty Pure Sine Wave Inverter |
| SA601 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Low voltage LNA and mixer - 1GHz |
| SA601DK | 功能描述:射頻混合器 1GHZ LV LNA & MIXER RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| SA601DK,112 | 功能描述:射頻混合器 1GHZ LV LNA & MIXER RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| SA601DK,118 | 功能描述:射頻混合器 1GHZ LV LNA & MIXER RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
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