Philips Semiconductors
Product specification
NE/SA600
1GHz LNA and mixer
1993 Dec 15
49
AC ELECTRICAL CHARACTERISTICS
1,2
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
TYP
UNITS
–3
σ
+3
σ
LNA
(V
CC
= V
CCMX
= +5V, T
A
= 25
°
C; Enable = Hi, Test Figure 1, unless otherwise stated.)
S
21
S
21
Amplifier gain
Amplifier gain in thru mode
Gain temperature sensitivity enabled
Gain temperature sensitivity in thru mode
Gain frequency variation
Amplifier reverse isolation
Amplifier input match
3
Amplifier output match
Amplifier input 1dB gain compression
Amp input 3rd-order intercept
Amp input 3rd-order intercept (thru mode)
Amplifier noise figure
Amp noise figure w/shunt 15nH inductor
at input
900MHz
14.9
–9.0
16
-7.5
-0.008
-0.014
-0.014
-42
-10
-15
-20
-10
+26
2.2
17.1
–6.0
dB
dB
Enable = LO, 900MHz
900MHz
Enable = LO, 900MHz
800MHz - 1.2GHz
900MHz
900MHz
900MHz
900MHz
Test Fig. 2, 900MHz
Test Fig. 2, 900MHz, Enable = LO
900MHz
S
21
/
T
S
21
/
T
S
21
/
f
S
12
S
11
S
22
P
-1dB
IP
3
dB/
°
C
dB/
°
C
dB/MHz
dB
dB
dB
dBm
dBm
dBm
dB
–47
–11
–16.8
–21.2
–11.6
–37
–9
–13.2
–18.8
–8.6
1.9
2.5
NF
900MHz
1.7
2.0
2.3
dB
t
ON
Amplifier turn-on time
Coupling = 100pF
Coupling = 0.01
μ
F
Enable Lo
→
Hi
30
3
μ
s
ms
t
OFF
Amplifier turn-off time
Coupling = 100pF
Coupling = 0.01
μ
F
Enable Hi
→
Lo
10
1
μ
s
ms
Mixer
(V
CC
= V
CCMX
= +5V, T
A
= 25
°
C, Enable = Hi, f
LO
= 1GHz @ 0dBm, f
RF
= 900MHz, f
IF
= 100MHz, Test Fig. 1, unless otherwise stated)
VG
C
PG
C
S
11RF
NF
M
P
-1dB
IP
3INT
IP
2INT
G
RFM-IF
G
LO-IF
G
LO-RFM
S
11LO
G
LO-RF
G
RFO-RFM
LNA + Mixer
(V
CC
=V
CCMX
=+5V, T
A
=25
°
C, Enable=Hi, f
LO
=1GHz @ 0dBm, f
RF
= 900MHz, f
IF
= 100MHz, Test Fig. 1, unless otherwise
stated)
Mixer voltage conversion gain
Mixer power conversion gain
Mixer input match
Mixer SSB noise figure
Mixer input 1dB gain compression
Mixer input third order intercept
Mixer input second order intercept
Mixer RF feedthrough
Mixer LO feedthrough
Local oscillator to mixer input feedthrough
LO input match
Local oscillator to RF input feedthrough
Filter feedthrough
R
L1
= R
L2
= 1k
R
L1
= R
L2
= 1k
900MHz
9.5
–3.05
–23
12.2
–5.3
+5
+18
10.4
–2.6
-20
14
-4
+6
+20
–7
-10
-33
–20
-46
-39
11.3
–2.15
–17
15.8
–2.7
+7
+22
dB
dB
dB
dB
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
Test Fig. 3, 900MHz, f
IF
= 80MHz
900MHz
900MHz
900MHz
900MHz, C
IF
= 3pF
900MHz, C
IF
= 3pF
900MHz
900MHz
900MHz
900MHz
–24
–16
PG
C
NF
IP
3
Overall power conversion gain
Overall noise figure
Overall input 3rd-order intercept
13.4
3.5
–13
dB
dB
dBm
NOTE:
1. All meausrements include the effects of the NE/SA600 Evaluation Board (see Figure ) unless otherwise noted. Measurement system
impedance is 50
.
2. Standard deviations are estimated from design simulations to represent manufacturing variations over the life of the product.
3. With a shunt 15nH inductor at the input of the LNA, the value of S
11
is typically –15dB.