參數(shù)資料
型號： SA5209N
廠商： NXP SEMICONDUCTORS
元件分類： 衰減器
英文描述： Wideband variable gain amplifier
中文描述： 0 MHz - 850 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
文件頁數(shù)： 7/17頁
文件大?。?/td> 202K
代理商： SA5209N
Philips Semiconductors
Product specification
SA5209
Wideband variable gain amplifier
1997 Nov 07
7
This circuit will exhibit about a 7dB
noise figure with approximately
22dB gain. Narrowband circuits
have the advantage of greater stabil-
ity, particularly when multiple de-
vices are cascaded.
50
50
50
+5V
+1V
2:1 TURNS RATIO
TRANSFORMER
SOURCE
OUTPUT
5209
V
AGC
SR00242
Figure 6. Narrowband Noise Optimization
This circuit will exhibit about an 8dB
noise figure with 24dB gain.
50
50
50
+5V
+1V
MINI CIRCUITS
SOURCE
OUTPUT
5209
1 : 4
V
AGC
SR00243
Figure 7. Broadband Gain Optimization
This circuit will exhibit approximate-
ly an 8dB noise figure and 25dB gain.
50
50
50
+5V
+1V
4:1 TURNS RATIO
LC TUNED
SOURCE
OUTPUT
5209
V
AGC
SR00244
Figure 8. Narrowband Gain Optimization
The noise figure of this configuration
will be approximately 15dB.
50
50
50
+5V
+1V
SOURCE
OUTPUT
5209
50
V
AGC
SR00245
Figure 9. Simple Amplifier Configuration
With the 50
source left untermi-
nated, the noise figure is 9dB.
50
50
50
+5V
+1V
SOURCE
OUTPUT
5209
V
AGC
SR00246
Figure 10. Unterminated Configuration
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