參數(shù)資料
型號: S75WS256NDFBAWLK0
廠商: SPANSION LLC
元件分類: 存儲(chǔ)器
英文描述: Stacked Multi-Chip Product (MCP)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA84
封裝: 9 X 12 MM, 1.40 MM HEIGHT, FBGA-84
文件頁數(shù): 6/15頁
文件大?。?/td> 235K
代理商: S75WS256NDFBAWLK0
4
S75WS-N Based MCPs
S75WS-N_02_A2 October 6, 2005
P r e l i m i n a r y
2
Ordering Information
The ordering part number is formed by a valid combination of the following:
Package Marking Note:
The BGA package marking omits the leading
S75
and packing type designator from the ordering part number.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult
your local sales office to confirm availability of specific valid combinations and to check on newly
released combinations.
S75WS
256
N
D
F
BA
W
L
K 0
Packing Type
0
=
2
=
3
=
Tray
7” Tape and Reel
13” Tape and Reel
RAM Supplier; Speed Combination
K
=
RAM Type 4, 54 MHz
J
=
RAM Type 4, 66 MHz
H
=
RAM Type 4, 80 MHz
Package Dimensions and Ball Count; DY B Pow er Up;
Flash Device Family ( Data Storage)
L
=
1.4 mm, 9 x 12,
84 ball;
N
=
1.4 mm, 9 x 12,
84 ball;
U
=
1.4mm, 11x13, 115-ball, x16 ORNAND Data Flash
S
=
1.4mm, 11x13, 115-ball, x8 ORNAND Data Flash
0, WS as Data Flash
1, WS as Data Flash
Temperature R ange
W
=
Wireless (–25°C to + 85°C)
Package Type And Material
BA
=
Very Thin Fine-Pitch Ball Grid Array (BGA),
Lead (Pb)-free Compliant Package
BF
=
Very Thin Fine-Pitch Ball Grid Array (BGA),
Lead (Pb)-free Package
Data Flash Density
F
=
512 Mb
G
=
1024 Mb
RAM Density
D
=
128 Mb
E
=
256 Mb
Process Technology
N
=
110 nm, Mirror Bit Technology
Code Flash Density
256
=
256 Mb
Device Family
S75WS =
Multi-chip Product (MCP)
1.8-volt Burst Mode Flash Memory, RAM, and data flash
Table 2.1 MCP Configurations and Valid Combinations
Valid Combination
BA, BF
S75WS256N
D
F
W
L, N
K, H
Table 2.2 ORNAND Configurations and Valid Combinations
Valid Combination
BA, BF
S75WS256N
E
G
W
U, S
K, J, H
相關(guān)PDF資料
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