參數(shù)資料
型號: S75WS256NDFBAWLH2
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: Stacked Multi-Chip Product (MCP)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA84
封裝: 9 X 12 MM, 1.40 MM HEIGHT, FBGA-84
文件頁數(shù): 3/10頁
文件大?。?/td> 123K
代理商: S75WS256NDFBAWLH2
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not design
in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
Publication Number
S73WS-P_00
Revision
A
Amendment
0
Issue Date
March 16, 2006
Features
Power supply voltage of 1.7 to 1.95V
Flash access time: 80 ns for NOR Flash
Flash burst frequencies: 66 MHz, 80 MHz, 108 MHz
Mobile SDRAM burst frequency: 104 MHz (SDR)
Package:
– 9.0 x 12.0 mm MCP
Operating Temperature
– –25°C to +85°C (wireless)
The S73WS series is a product line of stacked packages and consists of:
One NOR flash memory die
One Mobile SDRAM die on shared bus
The products covered by this document are listed in the table below.
Note:
For a full list of OPNs, please contact the local sales representative or refer to the Ordering Information valid combinations tables.
For detailed specifications, please refer to the individual data sheets.
S73WS-P based MCP Products
1.8 Volt-only x16 Simultaneous Read/Write,
Burst Mode Flash
Mobile SDRAM on Shared Bus
Data Sheet
(Advance Information)
Device
DRAM Density
128Mb
S29WS256P
S73WS256PD0 (MCP) (SDR)
Document
S29WS-P
Publication Identification Number (PID)
S29WS-P_00
SDRAM_08
128 Mb Mobile SDR-DRAM Type 5
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