參數資料
型號: S71WS512NE0BFWZZ2
廠商: SPANSION LLC
元件分類: 存儲器
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and pSRAM CMOS 1.8 Volt
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA96
封裝: 9 X 12 MM, LEAD FREE, FBGA-96
文件頁數: 121/142頁
文件大小: 1996K
代理商: S71WS512NE0BFWZZ2
June 28, 2004 S71WS512NE0BFWZZ_00_A1
128Mb pSRAM
121
P r e l i m i n a r y
TIMING DIAGRAMS (Continued)
Asynchronous Write Timing #2 (WE# Control)
Note:
This timing diagram assumes CE2=H and ADV#=L.
Asynchronous Write Timing #3-1 (WE# / LB# / UB# Byte Write Control)
Note:
This timing diagram assumes CE2=H, ADV#=L and OE#=H.
t
AS
ADDRESS
WE#
CE#1
t
WC
t
WR
t
WP
LB#, UB#
ADDRESS VALID
t
AS
t
WR
t
WP
VALID DATA INPUT
DQ
(Input)
t
DH
t
DS
OE#
t
OES
t
OHZ
t
WC
VALID DATA INPUT
t
DH
t
DS
Low
ADDRESS VALID
t
OHAH
t
AS
ADDRESS
WE#
CE#1
t
WC
t
BR
t
WP
LB#
ADDRESS VALID
t
AS
t
BR
t
WP
VALID DATA INPUT
DQ0-7
(Input)
t
DH
t
DS
UB#
t
WC
VALID DATA INPUT
t
DH
t
DS
Low
ADDRESS VALID
DQ8-15
(Input)
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