參數(shù)資料
型號(hào): S71GL064A80BFW0B2
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和RAM
文件頁數(shù): 65/102頁
文件大?。?/td> 1606K
代理商: S71GL064A80BFW0B2
March 31, 2005 S71GL032A_00_A0
S71GL032A Based MCPs
65
A d v a n c e I n f o r m a t i o n
DC Characteristics
CMOS Compatible
Notes:
1.
2.
3.
4.
5.
6.
7.
On the WP#/ACC pin only, the maximum input load current when WP# = V
IL
is ± 5.0 μA.
The I
CC
current listed is typically less than 3.5 mA/MHz, with OE# at V
IH
.
Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
I
CC
active while Embedded Erase or Embedded Program is in progress.
Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns.
V
CC
voltage requirements.
Not 100% tested.
Parameter
Symbol
Parameter Description ( Notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current (Note 1)
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, ACC Input Load Current
V
= V
CC max
; A9 =
12.5 V
-40°C to 0°C
250
μA
0°C to 85°C
35
I
LR
Reset Leakage Current
V
CC
= V
CC max
; RESET# = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Initial Read Current (Notes 2, 3)
CE# = V
IL,
OE# =
V
IH
,
1 MHz
5
20
mA
5 MHz
18
25
10 MHz
35
50
I
CC2
V
CC
Intra-Page Read Current (Notes 2, 3)
CE# = V
IL,
OE# = V
IH
10 MHz
5
20
mA
40 MHz
10
40
I
CC3
V
CC
Active Write Current (Note 3)
CE# = V
IL,
OE# = V
IH
50
60
mA
I
CC4
V
CC
Standby Current (Note 3)
CE#, RESET# = V
CC
±
0.3 V,
WP# = V
IH
1
5
μA
I
CC5
V
CC
Reset Current (Note 3)
RESET# = V
SS
±
0.3 V, WP# = V
IH
1
5
μA
I
CC6
Automatic Sleep Mode (Notes 3, 5)
V
= V
CC
±
0.3 V;
-0.1< V
IL
0.3 V, WP# = V
IH
1
5
μA
V
IL
Input Low Voltage 1 (Note 6)
–0.5
0.8
V
V
IH
Input High Voltage 1 (Note 6)
0.7 V
CC
V
CC
+ 0.5
V
V
HH
Voltage for ACC Program
Acceleration
V
CC
= 2.7 –3.6 V
11.5
12.0
12.5
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 2.7 –3.6 V
11.5
12.0
12.5
V
V
OL
Output Low Voltage (Note 6)
I
OL
= 4.0 mA, V
CC
= V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
0.85 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
V
V
LKO
Low V
CC
Lock-Out Voltage (Note 7)
2.3
2.5
V
相關(guān)PDF資料
PDF描述
S71GL064A80BFW0B3 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71GL064A80BFW0F3 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71PL254 STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
S71PL032J STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
S71PL032J04 STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S71GL064A80BFW0B3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71GL064A80BFW0F0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71GL064A80BFW0F2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71GL064A80BFW0F3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71GL064AA0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM