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| 型號： | S71GL064A80BFW0B2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和RAM |
| 文件頁數(shù)： | 41/102頁 |
| 文件大?。?/td> | 1606K |
| 代理商： | S71GL064A80BFW0B2 |
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March 31, 2005 S71GL032A_00_A0
S71GL032A Based MCPs
41
A d v a n c e I n f o r m a t i o n
Table 19. System Interface String
Note:
CFI data related to V
CC
and time-outs may differ from actual V
CC
and time-outs of the product. Please consult the Ordering
Information tables to obtain the V
CC
range for particular part numbers. Please consult the Erase and Programming Performance table
for typical timeout specifications.
Addresses
( x16)
Data
Description
1Bh
0027h
V
CC
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
V
CC
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
0007h
Reserved for future use
20h
0007h
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0001h
Reserved for future use
24h
0005h
Max. timeout for buffer write 2
N
times typical
25h
0004h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
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