參數資料
型號： S29NS064N0PBJW000
廠商： SPANSION LLC
元件分類： PROM
英文描述： Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
封裝： 7.70 X 6.20 MM, LEAD FREE, FBGA-44
文件頁數： 64/86頁
文件大?。?/td> 1036K
代理商： S29NS064N0PBJW000
62
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
15. DC Characteristics
15.1
CMOS Compatible
Notes
1.
Maximum I
CC
specifications are tested with V
CC
= V
CC
max
.
2. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for t
ACC
+ 20 ns. Typical sleep mode current is equal to I
CC3
.
5. Specifications assume 8 I/Os switching.
6. Not 100% tested. ACC is not a power supply pin.
7. While measuring Output Leakage Current, CE# should be at V
IH
.
8. V
IH
= V
CC
± -0.2 V and V
IL
> -0.1V.
9. Clock Frequency 66 MHz and in Continuous Mode.
Parameter
Description
Test Conditions
(Note 1)
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC max
±1
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC max
±1
μA
I
CCB
V
Active Burst Read Current
(Note 5)
CE# = V
IL
, OE# = V
IL
, burst
length = 8
80 MHz
26
36
mA
66 MHz
24
33
CE# = V
IL
, OE# = V
IL
, burst
length = 16
80 MHZ
26
38
mA
66 MHz
24
35
CE# = V
, OE# = V
IL
, burst
length = 32
80 MHZ
28
40
mA
66 MHz
26
37
CE# = V
, OE# = V
IL
, burst
length = continuous
80 MHZ
30
42
mA
66 MHz
28
39
I
CC1
V
CC
Active Asynchronous Read
Current
(Note 2)
CE# = V
IL
, OE# = V
IH
5 MHz
15
18
mA
1 MHz
3
4
mA
I
CC2
V
CC
Active Write Current
(Note 3)
CE# = V
IL
, OE# = V
IH
, ACC = V
IH
19
52.5
mA
I
CC3
V
CC
Standby Current
(Note 4)
CE# = V
IH
, RESET# = V
IH
(Note 8)
20
70
μA
I
CC4
V
CC
Reset Current
RESET# = V
IL,
CLK = V
IL
(Note 8)
80
150
μA
I
CC5
V
Active Current
(Read While Write)
CE# = V
IL
, OE# = V
IL
(Note 8)
(Note 9)
50
60
mA
I
CC6
V
CC
Sleep Current
CE# = V
IL
, OE# = V
IH
20
70
μA
I
PPW
Accelerated Program Current
(Note 6)
ACC = 9 V
20
30
mA
I
PPE
Accelerated Erase Current
(Note 6)
ACC = 9 V
20
30
mA
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
CCQ
– 0.4
V
CCQ
+ 0.2
V
V
OL
Output Low Voltage
I
OL
= 100 μA, V
CC
= V
CC
min
0.1
V
V
OH
Output High Voltage
I
OH
= –100 μA, V
CC
= V
CC
min
V
CCQ
– 0.1
V
V
ID
Voltage for Accelerated Program
8.5
9.5
V
V
LKO
Low V
CC
Lock-out Voltage
1.0
1.4
V
相關PDF資料
PDF描述
S29NS064N0PBJW002 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0PBJW003 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW000 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW002 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW003 Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
相關代理商/技術參數
參數描述
S29NS064N0PBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0PBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
S29NS064N0SBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
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