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參數(shù)資料
| 型號： | S29NS064N0PBJW000 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| 封裝： | 7.70 X 6.20 MM, LEAD FREE, FBGA-44 |
| 文件頁數(shù)： | 30/86頁 |
| 文件大?。?/td> | 1036K |
| 代理商： | S29NS064N0PBJW000 |
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28
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Table 9.2
System Interface String
Addresses
Data
Description
S29NS256N
S29NS128N
S29NS064N
1Bh
0017h
V
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
V
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
ACC Min. voltage (00h = no ACC pin present) Refer to 4Dh
1Eh
0000h
ACC Max. voltage (00h = no ACC pin present) Refer to 4Eh
1Fh
0006h
Typical timeout per single byte/word write 2
N
μs
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
Typical timeout per individual block erase 2
N
ms
20h
0009h
21h
000Ah
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0003h
Max. timeout for byte/word write 2
N
times typical
24h
0001h
Max. timeout for buffer write 2
N
times typical
25h
0002h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Table 9.3
Device Geometry Definition
Addresses
Data
Description
S29NS256N
S29NS128N
S29NS064N
27h
0019h
0018h
0017h
Device Size = 2N byte
28h
0001h
Flash Device Interface description (refer to CFI publication 100)
29h
0000h
2Ah
0006h
Max. number of bytes in multi-byte write = 2N (00h = not supported)
2Bh
0000h
2Ch
0002h
Number of Erase Block Regions within device
2Dh
00FEh
007Eh
007Eh
Erase Block Region 1 Information (refer to the CFI specification or
CFI publication 100)
2Eh
0000h
0000h
0000h
2Fh
0000h
0000h
0000h
30h
0002h
0002h
0001h
31h
0003h
0007h
Erase Block Region 2 Information
32h
0000h
0000h
33h
0080h
0020h
34h
0000h
0000h
35h
0000h
Erase Block Region 3 Information
36h
0000h
37h
0000h
38h
0000h
39h
0000h
Erase Block Region 4 Information
3Ah
0000h
3Bh
0000h
3Ch
0000h
相關PDF資料 |
PDF描述 |
|---|---|
| S29NS064N0PBJW002 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0PBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW002 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS064N0PBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0PBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
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