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參數(shù)資料
| 型號： | S29NS064N0PBJW000 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44 |
| 封裝： | 7.70 X 6.20 MM, LEAD FREE, FBGA-44 |
| 文件頁數(shù)： | 58/86頁 |
| 文件大?。?/td> | 1036K |
| 代理商： | S29NS064N0PBJW000 |
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56
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously
with DQ6–DQ0 while Output Enable (OE#) is asserted low. That is, the device may change from providing
status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid
data, the data outputs on DQ6–DQ0 may be still invalid. Valid data on DQ7–DQ0 will appear on successive
read cycles.
Table 12.2 on page 60
shows the outputs for Data# Polling on DQ7.
Figure 12.1 on page 56
shows the Data#
Polling algorithm.
Figure 19.9 on page 72
in the
AC Characteristics
section shows the Data# Polling timing
diagram.
Figure 12.1
Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data
START
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS064N0PBJW002 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0PBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW000 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW002 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW003 | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS064N0PBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0PBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS064N0SBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
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