參數(shù)資料
型號: S29NS032J0PBFW002
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述: 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
封裝: 7.70 X 6.20 MM, LEAD FREE, FBGA-44
文件頁數(shù): 78/85頁
文件大?。?/td> 799K
代理商: S29NS032J0PBFW002
74
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
Appendix B: Daisy Chain Information
Table 25. Daisy Chain Part for 64Mbit 110 nm Flash Products (VDD044, 9.2 x 8 mm)
Table 26. VDD044 Package Information
Table 27. VDD044 Connections
Daisy Chain Part Number
Package
Marking
Daisy Chain
Connection
Spansion 64Mb Flash
Part Number
Description
Lead (Pb) - Free Compliant:
AM29N643GVAD21CT
Lead (Pb)- Free:
AM29N643GVAD21CFT
N643GD21C
N643GD21CF
Die Level
S29NS064J
64Mbit 110nm
Component Type/Name
VDD044
Solder resist opening
0.25 + 0.05 mm
Daisy Chain Connection Level
On die
Lead-Free Compliant
Yes
Quantity per Reel
600 (300 units per reel by special request to factory)
C1–D1
C6–D6
A10–B10
A5–B5
C2–D2
C7–D7
A9–B9
A4–B4
C3–D3
C8–D8
A8–B8
A3–B3
C4–D4
C9–D9
A7–B7
A2–B2
C5–D5
C10–D10
A6–B6
A1–B1
On substrate
NF1–NF3
NF2–NF4
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S29NS032J0PBFW003 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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S29NS032J0PBJW000 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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相關代理商/技術參數(shù)
參數(shù)描述
S29NS032J0PBFW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories