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參數(shù)資料
| 型號： | S29NS032J0PBFW002 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44 |
| 封裝： | 7.70 X 6.20 MM, LEAD FREE, FBGA-44 |
| 文件頁數(shù)： | 55/85頁 |
| 文件大?。?/td> | 799K |
| 代理商： | S29NS032J0PBFW002 |
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March 22, 2006 S29NS-J_00_A10
S29NS-J
51
D a t a S h e e t
Absolute Maximum Ratings
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to + 150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to + 125°C
Voltage with Respect to Ground,
All Inputs and I/Os except A
cc
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to V
CC
+ 0.5 V
V
CC
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to + 2.5 V
A
cc
(Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to + 12.5 V
Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, input at I/Os may undershoot V
SS
to –
2.0 V for periods of up to 20 ns during voltage transitions inputs might overshooot to V
CC
+ 0.5 V for periods up to
20 ns. See
Figure 5
. Maximum DC voltage on output and I/Os is V
CC
+ 0.5 V. During voltage transitions outputs may
overshoot to V
CC
+ 2.0 V for periods up to 20 ns. See
Figure 6
.
2. Minimum DC input voltage on A
cc
is –0.5 V. During voltage transitions, A
cc
may undershoot V
SS
to –2.0 V for periods
of up to 20 ns. See
Figure 5
. Maximum DC input voltage on A
cc
is + 12.5 V which may overshoot to + 13.5 V for
periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater
than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at these or any other conditions above those indicated in the
operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions
for extended periods may affect device reliability.
Operating Ranges
Ambient Temperature (T
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to + 85°C
V
CC
Supply Voltages
V
CC
min . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . + 1.7 V
V
CC
max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . + 1.95 V
Note:
Operating ranges define those limits between which the functionality of the device is guaranteed.
Figure 5. Maximum Negative
Overshoot Waveform
Figure 6. Maximum Positive Overshoot Waveform
20 ns
20 ns
+ 0.9 V
20 ns
–2.0 V
20 ns
20 ns
V
CC
+ 2.0 V
20 ns
2.0 V
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相關代理商/技術參數(shù) |
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|---|---|
| S29NS032J0PBFW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBJW00 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBJW000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBJW002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBJW003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
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