參數(shù)資料
型號: S29NS032J0PBFW002
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
中文描述: 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
封裝: 7.70 X 6.20 MM, LEAD FREE, FBGA-44
文件頁數(shù): 50/85頁
文件大?。?/td> 799K
代理商: S29NS032J0PBFW002
46
S29NS-J
S29NS-J_00_A10 March 22, 2006
D a t a S h e e t
Figure 3. Data# Polling Algorithm
DQ7 = D
a
t
a
Ye
s
No
No
DQ5 = 1
No
Ye
s
Ye
s
FAIL
PA
SS
Re
a
d DQ7–DQ0
Addr = VA
Re
a
d DQ7–DQ0
Addr = VA
DQ7 = D
a
t
a
S
TART
Notes:
1.
VA = Valid Address for programming. During a sector erase
operation, a valid address is any sector address within the
sector being erased. During chip erase, a valid address is any
non-protected sector address.
2.
DQ7 should be rechecked even if DQ5 = “1” because DQ7 may
change simultaneously with DQ5.
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S29NS032J0PBJW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
S29NS032J0PBJW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories