參數(shù)資料
型號(hào): S29NS-N
廠商: Spansion Inc.
英文描述: Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
中文描述: 同步讀/寫,復(fù)用,突發(fā)模式閃存
文件頁(yè)數(shù): 9/86頁(yè)
文件大小: 1036K
代理商: S29NS-N
S29NS-N_00_A12 June 13, 2006
S29NS-N MirrorBit Flash Family
7
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
2.
Product Selector Guide
3.
Block Diagram
Note
A
max
indicates the highest order address bit. A
max
equals A23 for NS256N, and A22 for NS128N and A21 for S29NS064N.
Description
S29NS256N, S29NS128N, S29NS064N
Burst Frequency
80 MHz
66 MHz
Max Initial Synchronous Access Time, ns (T
IACC
)
80
80
Max Burst Access Time, ns (T
BACC
)
9
11.0
Max Asynchronous Access Time, ns (T
ACC
)
80
80
Max CE# Access Time, ns (T
CE
)
Max OE# Access Time, ns (T
OE
)
9
11.0
Inp
u
t/O
u
tp
u
t
B
u
ffer
s
X-Decoder
Y-Decoder
Chip En
ab
le
O
u
tp
u
t En
ab
le
Logic
Er
as
e Volt
a
ge
Gener
a
tor
PGM Volt
a
ge
Gener
a
tor
Timer
V
Detector
S
t
a
te
Control
Comm
a
nd
Regi
s
ter
V
CCQ
V
CC
V
SS
WE#
RE
S
ET#
ACC
CE#
OE#
A/DQ15–A/DQ0
D
a
t
a
L
a
tch
Y-G
a
ting
Cell M
a
trix
A
s
a
t
A/DQ15–A/DQ0
RDY
B
u
ffer
RDY
B
u
r
s
t
S
t
a
te
Control
B
u
r
s
t
Addre
ss
Co
u
nter
AVD#
CLK
A
m
a
x
–A0
WP#
A
m
a
x
–A16
相關(guān)PDF資料
PDF描述
S29NS128JPLBFW002 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
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