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參數(shù)資料
| 型號(hào)： | S29NS-N |
| 廠商： | Spansion Inc. |
| 英文描述： | Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| 中文描述： | 同步讀/寫(xiě)，復(fù)用，突發(fā)模式閃存 |
| 文件頁(yè)數(shù)： | 84/86頁(yè) |
| 文件大?。?/td> | 1036K |
| 代理商： | S29NS-N |
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82
S29NS-N MirrorBit Flash Family
S29NS-N_00_A12 June 13, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Tables 2, 3, 4, 5, 6, 7, 8, and 9
Change Wait State titles and columns in these tables.
Table 24
Changed Function column and Settings to represent Reserved CR Bits.
Table 27
Removed several bold lines between columns.
DC Characteristics
Reduced Typ and Max values for I
CCB
.
Added note for clock frequency in continuous mode.
Erase & Programming Performance Table
Corrected Sector Erase Time Typ. Value for 64 Kword from 0.6 to 0.8 in Erase and Programming
Performance table
Physical Dimensions (S29NS046N)
Replaced VDE044 with new package drawing.
Device History
Updated Device History table
24.6
Revision A4 (April 12, 2005)
Global Changes
Removed 64Mb density.
Removed 54MHz speed option.
Changed ACC to V
PP.
Read Access Times
Removed burst access for 54MHz.
Defined asynchronous random access and synchronous random access to 80 ns for all speed options.
DC Characteristics
CMOS Compatible Table.
Updated I
CC3
and I
CC6
values from 40
μ
A to 70
μ
A.
24.7
Revision A5 (August 15, 2005)
Added S29NS064N with new sector and bank architecture.
Added VDE044 package type for S29NS064N
Erase/Program Operations table
Updated description and values for t
CS
.
Device History
Updated table with latest revision information.
24.8
Revision A6 (August 24, 2005)
AC Characteristics
Updated the notes for the V
CC
Power-up table
Erase and Programming Performance Operations
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29NS128JPLBFW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBAW003 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW00 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW000 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
| S29NS032J0PBFW002 | 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29NS-N_07 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory |
| S29NS-P | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29PL032J | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL032J55BAI120 | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 32Mbit 2M x 16bit 55ns 48-Pin FBGA Tray 制造商:Spansion 功能描述:FLASH PARALLEL - Trays |
| S29PL032J55BFI120 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 55NS 48FBGA - Trays |
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