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參數(shù)資料
| 型號(hào)： | S29CD016G0MFAN010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 64 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80 |
| 文件頁數(shù)： | 57/81頁 |
| 文件大?。?/td> | 1276K |
| 代理商： | S29CD016G0MFAN010 |
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58
S29CD-G Flash Family
S29CD-G_00_B1 March 3, 2009
Data
Sheet
(Pre limin ar y)
Under both these conditions, the system must issue the reset command to return the device to reading array
data.
16.7
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an
erase operation started. (The sector erase timer does not apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out also applies after each additional sector erase command.
When the time-out is complete, DQ3 switches from 0 to 1. The system may ignore DQ3 if the system can
guarantee that the time between additional sector erase commands is always less than 50 s. Also see
After the sector erase command sequence is written, the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure the device accepted the command sequence, and then read DQ3. If
DQ3 is 1, the internally controlled erase cycle started; all further commands (other than Erase Suspend) are
ignored until the erase operation is complete. If DQ3 is 0, the device accepts additional sector erase
commands. To ensure the command is accepted, the system software should check the status of DQ3 prior
to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last
command might not have been accepted. Table 16.1 shows the outputs for DQ3.
Notes
1. DQ5 switches to 1 when an Embedded Program or Embedded Erase operation exceeds the maximum timing limits. See DQ5: Exceeded
Timing Limits on page 57 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. See DQ7: Data# Polling on page 54 and DQ2: Toggle Bit II
on page 56 for further details.
17. Absolute Maximum Ratings
Notes
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input at I/O pins may overshoot VSS to -2.0V for periods of
up to 20 ns. See Figure 17.2 on page 59. Maximum DC voltage on output and I/O pins is 3.6V (16Mb), 2.75V (32Mb). During voltage
transitions output pins may overshoot to VCC + 2.0V for periods up to 20 ns. See Figure 17.2 on page 59.
2. Minimum DC input voltage on pins ACC, A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and RESET# may
overshoot VSS to -2.0V for periods of up to 20 ns. See Figure 17.1 on page 59. Maximum DC input voltage on pin A9 and OE# is +13.0 V
which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not
implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
5. Parameter describes VIO power supply.
6. Parameter describes I/O pin voltage tolerances.
Table 16.1 Write Operation Status
Operation
DQ7
DQ6
DQ5
DQ3
DQ2
RY/BY#
Standard
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Erase
Suspend
Mode
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
0
Storage Temperature, Plastic Packages
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +145°C
-0.5 V to + 3.0V (16Mb), -0.5V to + 2.75V (32Mb)
ACC, A9, OE#, and RESET# (Note 2)
–0.5 V to +13.0 V
Address, Data, Control Signals
-0.5V to 3.6V (16 Mb), –0.5 V to 2.75 V (32 Mb)
All other pins (Notes 1, 6)
-0.5V to 3.6V (16 Mb),–0.5 V to 2.75 V (32 Mb)
Output Short Circuit Current (Note 3)
200 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016G0MFAN011 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFFA000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0MFFA002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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