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參數(shù)資料
| 型號： | S29CD016G0MFAN010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 64 ns, PBGA80 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80 |
| 文件頁數(shù)： | 53/81頁 |
| 文件大?。?/td> | 1276K |
| 代理商： | S29CD016G0MFAN010 |
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March 3, 2009 S29CD-G_00_B1
S29CD-G Flash Family
55
Da ta
Shee t
(Prelim i nar y )
Figure 16.1 Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is an address within any sector selected for
erasure. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a 0 (busy) until the
internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is
asserted when a program or erase operation is not executing (RY/BY# pin is floating), the reset operation is
completed in a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the
RESET# pin returns to VIH.
Since the RY/BY# pin is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-
up resistor to VCC. An external pull-up resistor is required to take RY/BY# to a VIH level since the output is an
open drain.
Table 16.1 on page 58 shows the outputs for RY/BY#. Figure 24.2 on page 64, Figure 24.6 on page 67, and
Figure 24.8 on page 69 show RY/BY# for read, reset, program, and erase operations, respectively.
DQ7 = Data?
Yes
No
DQ5 = 1?
No
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
START
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016G0MFAN011 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFAN013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory |
| S29CD016G0MFFA000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0MFFA002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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