參數(shù)資料
型號: S1C88832F0A0100
元件分類: 微控制器/微處理器
英文描述: MICROCONTROLLER, PQFP128
封裝: PLASTIC, QFP-128
文件頁數(shù): 49/160頁
文件大?。?/td> 1244K
代理商: S1C88832F0A0100
134
EPSON
S1C88832/88862 TECHNICAL MANUAL
7 ELECTRICAL CHARACTERISTICS
7.7 Oscillation Characteristics
Oscillation characteristics change depending on conditions (board pattern, components used, etc.). Use the
following characteristics as reference values. In particular, when a ceramic oscillator is used for OSC3, use
the oscillator manufacturer’s recommended values for constants such as capacitance and resistance. The
oscillation start time is important because it becomes the wait time when OSC3 clock is used. (If OSC3 is
used as CPU clock before oscillation stabilizes, the CPU may malfunction.)
s OSC1 (Crystal)
s OSC1 (CR)
s OSC3 (Crystal)
s OSC3 (Ceramic)
s OSC3 (CR)
Item
Symbol
Min.
Typ.
Max.
Unit
Condition
Oscillation start time
External gate capacitance
Built-in gate capacitance
Built-in drain capacitance
Frequency/IC deviation
Frequency/power voltage deviation
Frequency adjustment range
tsta
CG1
CD1
f/IC
f/V
f/CG
5
-10
25
12
3
25
10
1
S
pF
ppm
ppm/V
ppm
Including board capacitance
In case of the chip
VDD = constant
VDD = constant, CG = 5 to 25 pF
Note
1
2
Unless otherwise specified: VDD = 1.8 to 5.5 V, VSS = 0 V, Ta = 25
°C, Crystal oscillator = Q12C2*, CG1 = 25 pF (external), CD1 = Built-in
*
Q12C2 Made by Seiko Epson corporation
Note) 1
2
When crystal oscillation is selected by the mask option.
When crystal oscillation (gate capacitor built-in) is selected by the mask option.
Min.
Typ.
Max.
tsta
f/IC
-25
100
25
S
%
RCR = constant
Oscillation start time
Frequency/IC deviation
Item
Symbol
Unit
Condition
Note
Unless otherwise specified: VDD = 1.8 to 5.5 V, VSS = 0 V, Ta = -40 to 85
°C
Min.
Typ.
Max.
Oscillation start time (Normal mode)
Oscillation start time (High speed mode)
tsta
10
mS
4.0 MHz crystal oscillator
8.0 MHz crystal oscillator
1
Item
Symbol
Unit
Condition
Note
Unless otherwise specified: VDD = Within the operating voltage in each operating mode, VSS = 0 V, Ta = 25
°C,
Crystal oscillator = Q21CA301xxx*, RF = 1 M
, CG2 = CD2 = 15 pF
Note) 1
The crystal oscillation start time changes by the crystal oscillator to be used, CG2 and CD2.
*
Q21CA301xxx Made by Seiko Epson corporation
Min.
Typ.
Max.
tsta
f/IC
-25
100
25
S
%
RCR = constant
Oscillation start time (Normal mode)
Oscillation start time (High speed mode)
Frequency/IC deviation (Normal mode)
Frequency/IC deviation (High speed mode)
Item
Symbol
Unit
Condition
Note
Unless otherwise specified: VDD = Within the operating voltage in each operating mode, VSS = 0 V, Ta = -40 to 85
°C
Min.
Typ.
Max.
tsta
1
mS
Oscillation start time (Normal mode)
Oscillation start time (High speed mode)
4.0 MHz ceramic oscillator
8.0 MHz ceramic oscillator
Item
Symbol
Unit
Condition
Note
Unless otherwise specified: VDD = Within the operating voltage in each operating mode, VSS = 0 V, Ta = 25
°C,
Ceramic oscillator = CSA4.00MG / CSA8.00MTZ*, RF = 1 M
, CG2 = CD2 = 30 pF
*
CSA4.00MG / CSA8.00MTZ Made by Murata Mfg. corporation
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