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參數(shù)資料
| 型號(hào)： | S-24H30 |
| 廠商： | Seiko Instruments Inc. |
| 英文描述： | 64 Bits Non-Volatile CMOS RAM(64位CMOS非易失性RAM) |
| 中文描述： | 64位非揮發(fā)性CMOS存儲(chǔ)器（64位的CMOS非易失性內(nèi)存） |
| 文件頁數(shù)： | 8/16頁 |
| 文件大小： | 109K |
| 代理商： | S-24H30 |
SERIAL NON-VOLATILE RAM
S-24 Series
Seiko Instruments Inc.
7
3. E
2
PROM mode
Data is input to and output from the E
2
PROM through the SRAM.
3.1 Store
The SRAM data is copied into the E
2
PROM when STO instruction is executed or STORE goes low. The SRAM data
does not change after STO instruction. Since the data stored in the E
2
PROM is non-volatile, it is retained even if power
is turned off. In the case that store operation is performed while data is output on DO and during read operation of the
SRAM, DO becomes high-impedance. During store operation, all other operations are inhibited.
Both the previous recall latch and the write enable latch must be set before store operation.
3.2 Recall
The E
2
PROM data is recopied into the SRAM when RECALL goes low or RCL instruction is executed. In the case that
recall operation is performed while data is output on DO and during read operation of SRAM, DO becomes high-
impedance. During recall operation, all other operations are inhibited.
4. Sleep mode
Executing SLEEP instruction disables operation of the SRAM. The E
2
PROM data is retained. The sleep mode can be
released by recall operation.
Since the S-24 Series is in standby status and the current consumption is low when CE is at GND level, it is not necessary to
execute SLEEP instruction in order to reduce the current consumption while not operating.
5. Operation timing
After CE rose, when SK clock rises and DI goes high, a start bit is recognized and the fetch of an instruction starts. Data is
fetched to DI terminal at the rise of SK clock.
5.1 Read
D0 is output at the fall of the 8th clock, and others are output at the rise of the clock.
Figure 8 Read mode timing(S-24H45, S-24S45)
Figure 9 Read mode timing(S-24H30, S-24S30)
Hi-Z
0
X : Don
’
t care
7
6
5
4
3
2
1
D0
1
1
X
A
1
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
CE
X
A
A
SK
DI
DO
Hi-Z
14
13
12
11
Hi-Z
X : Don
’
t care
7
6
5
4
3
2
1
D0
1
1
X
A
1
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
CE
A
A
A
SK
DI
DO
24
23
22
21
20
19
18
17
10
9
8
15
D0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S-24H45I10 | SERIAL NON-VOLATILE RAM |
| S-24H30I10 | CONN DIN PLUG VERT 96POS 3ROWS |
| S-24S30I10 | DIN 41612 PCB Connector; Number of Contacts:96; Number of Rows:3; Pitch Spacing:0.1"; Connector Mounting:PC Board; Contact Termination:Press-Fit; Current Rating:3A; Gender:Male; Leaded Process Compatible:Yes |
| S-24H30IF10 | SERIAL NON-VOLATILE RAM |
| S-24S30IF10 | SERIAL NON-VOLATILE RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S-24H30I10 | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:SERIAL NON-VOLATILE RAM |
| S-24H30IF10 | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:SERIAL NON-VOLATILE RAM |
| S-24H45 | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:SERIAL NON-VOLATILE RAM |
| S-24H45I10 | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:SERIAL NON-VOLATILE RAM |
| S-24H45IF10 | 制造商:SII 制造商全稱:Seiko Instruments Inc 功能描述:SERIAL NON-VOLATILE RAM |
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