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參數(shù)資料
| 型號(hào)： | RQG1004UP-TL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier |
| 中文描述： | NPN硅鍺晶體管高頻低噪聲放大器 |
| 文件頁(yè)數(shù)： | 1/19頁(yè) |
| 文件大小： | 284K |
| 代理商： | RQG1004UP-TL-E |
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REJ03G1552-0100 Rev.1.00 Jul 20, 2007
Page 1 of 18
RQG1004UPAQL
NPN Silicon Germanium Transistor
High Frequency Low Noise Amplifier
REJ03G1552-0100
Rev.1.00
Jul 20, 2007
Features
Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc.
High gain and low noise.
MSG = 25 dB typ. , NF = 0.65 dB typ. at V
CE
= 2 V, I
C
= 5 mA, f = 0.9 GHz
MSG = 22 dB typ. , NF = 0.75 dB typ. at V
CE
= 2 V, I
C
= 5 mA, f = 1.8 GHz
MSG = 21 dB typ. , NF = 0.85 dB typ. at V
CE
= 2 V, I
C
= 5 mA, f = 2.4 GHz
MSG = 15 dB typ. , NF = 1.3 dB typ. at V
CE
= 2 V, I
C
= 10 mA, f = 5.8 GHz
High transition frequency
f
T
= 41 GHz typ.
Small and low height package
MFPAK-4 (1.4 x 0.8 x 0.55(max) mm)
Outline
1.Emitter
2.Collector
3.Emitter
4.Base
1
2
3
4
RENESAS package code: PUSF0004ZA-A
(Package name: MFPAK-4)
Note:
Marking is “UP-”.
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
V
mA
mW
mW
°
C
°C
Item
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Pc
Tj
Tstg
Ratings
8
3.5
1.2
35
80
200
note1
150
–55 to +150
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Notes: 1. Value on PCB (FR-4 : 40 x 40 x 1.6mm double side)
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