參數(shù)資料
型號: RQK0604IGDQA
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel MOS FET Power Switching
中文描述: 硅?通道場效應(yīng)晶體管功率開關(guān)
文件頁數(shù): 1/8頁
文件大?。?/td> 99K
代理商: RQK0604IGDQA
Rev.1.00 Jan 15, 2007 page 1 of 7
RQK0604IGDQA
Silicon N Channel MOS FET
Power Switching
REJ03G1496-0100
Rev.1.00
Jan 15, 2007
Features
Low on-resistance
R
DS(on)
= 111 m
typ.(at V
GS
= 4.5 V, I
D
= 1 A)
Low drive current
High speed switching
V
DSS
60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code:
PLSP0003ZB-A
(Package name:
MPAK
)
1. Source
2. Gate
3. Drain
G
D
S
1
2
3
1
2
3
Note:
Marking is “IG“.
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
Tch
Tstg
Ratings
60
±
12
2
8
2
0.8
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
10
μ
s, Duty cycle
1%
2. When using the glass epoxy board (FR-4 40
×
40
×
1 mm)
Note1
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