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參數(shù)資料
| 型號： | RQM2201DNSTL-E |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管功率開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 122K |
| 代理商： | RQM2201DNSTL-E |
REJ03G1492-0200 Rev.2.00 Apr 16, 2007
Page 1 of 7
RQM2201DNS
Silicon N Channel MOS FET
Power Switching
REJ03G1492-0200
Rev.2.00
Apr 16, 2007
Features
Small, thin and leadless type package (3
×
3 mm, t = 0.8 mm max.)
Two FET chips are mounted in one package
High density mounting
High speed switching. (Ciss = 200 pF typ)
V
DSS
≥
60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PWSN0006ZA-A
(Package name: WSON0303-6 <HWSON-6>)
1, 3: Source
2, 4: Gate
5, 6: Drain
(Bottom view)
1
4
2
G
6
D
S
1
4
G
5
D
S
3
3
4
1
2
FET No.1
(Nch)
FET No.2
(Nch)
5
6
Notes:
1. Marking is “M2201“.
2. The following maximum ratings and electric characteristics are applied to both FET1 and
FET2.
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
Pch
Note2
Pch
Note3
Tch
Tstg
Ratings
60
±
12
2
8
2
1
1.5
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, Duty cycle
≤
1%
2. 1 Drive operation: When using the glass epoxy board (FR-4 40
×
40
×
1 mm)
3. 2 Drive operation: When using the glass epoxy board (FR-4 40
×
40
×
1 mm)
Note1
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