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參數(shù)資料
| 型號： | RN5VM112C |
| 廠商： | Ricoh Co., Ltd. |
| 英文描述： | High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-SO -55 to 125 |
| 中文描述： | 鋰離子電池保護 |
| 文件頁數(shù)： | 5/25頁 |
| 文件大?。?/td> | 180K |
| 代理商： | RN5VM112C |
1
Li-lon BATTERY PROTECTOR
RN5VM1
××
C/D SERIES
OUTLINE
The RN5VM Series are protection ICs for over-charge/discharge of rechargeable one-cell Lithium-ion (Li+) batteries by
CMOS process.
The RN5VM Series can detect over-charge/discharge of Li+ one-cell and excess load current, further include a short cir-
cuit protector for preventing large external short circuit current.
Each of these ICs is composed of three voltage detectors, a reference unit, a hysteresis circuit, and a short circuit protec-
tor. When charging voltage crosses the detector threshold from a low value to a value higher than V
DET1
, the output of
C
OUT
pin, the output of over-charge detector/VD1, switches to low level, ..charger’s negative pin level. After detecting over-
charge the VD1 can be reset and the output of C
OUT
pin becomes “H” when the V
DD
voltage is coming down to a level low-
er than “V
DET1
- V
HYS1
”, or when a charger is disconnected from the battery pack while the V
DD
level is in between “V
DET1
”
and “V
DET1
- V
HYS1
” in the RN5VM1
××
C version.
While in the RN5VM1
××
D version after detecting over-charge, any load current can not be drawn from the battery pack
when the V
DD
voltage stays over “V
DET1
- V
HYS1
”, excepting that the VD1 can be reset and it allows to draw load current
when the V
DD
voltage is coming down to a level lower than “V
DET1
- V
HYS1
” because of a cell internal discharging.
The output of D
OUT
pin, the output of over-discharge detector/VD2, switches to “L” after internally fixed delay time passed,
when discharging voltage crosses the detector threshold from a high value to a value lower than V
DET2
. An excess load cur-
rent can be sensed and cut off after internally fixed delay time passed through the built in excess current detector, VD3,
with D
OUT
being enabled to low level. Once after detecting excess current, the VD3 is released and D
OUT
level switches
to “H” by detaching a battery pack from a load system.
Further, short circuit protector makes D
OUT
level to “L” immediately with external short circuit current and removing
external short circuit leads D
OUT
level to “H”. After detecting over-discharge, supply current will be kept extremely “L” by
halting some internal circuits operation. The output delay of over-charge detectors can be set by connecting external capac-
itors. Output type of C
OUT
and D
OUT
are CMOS. SOT23-6 is available.
FEATURES
Low supply current................................Supply current
TYP. 3.0μA
Standby current (after detecting over-discharge) TYP. 0.3μA
High withstand voltage..........................Absolute maximum ratings 28V (V
DD
–V-)
High accuracy detector threshold.......Over-charge detector
Over-discharge detector
Variety of detector threshold................Over-charge detector threshold
Over-discharge detector threshold
Built-in protection circuit.......................Excess current trip/Short circuit protector
Output delay of over-charge.................Time delay at C
3
= 0.01μF and V
DD
=4.3V
Ultra small package...............................SOT-23-6
±50mV
±2.5%
4.0V to 4.4V/step of 0.01V
2.0V to 3.0V/step of 0.05V
75ms for RN5VM111
×
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN5VM112C-TR | High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-TSSOP -55 to 125 |
| RN5VM112D | High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-TSSOP -55 to 125 |
| RN5VM112D-TR | High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-TSSOP -55 to 125 |
| RN73C2A115KBTG | RESISTOR SMD 115K |
| RN73C2A118KBTG | RESISTOR SMD 118K |
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