參數(shù)資料
型號(hào): RN5VM112C
廠商: Ricoh Co., Ltd.
英文描述: High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-SO -55 to 125
中文描述: 鋰離子電池保護(hù)
文件頁數(shù): 23/25頁
文件大小: 180K
代理商: RN5VM112C
19
RN5VM1
××
C/D
TYPICAL APPLICATION
3
4
1
2
5
6
+
RN5VM1
×××
1k
R
2
C
2
0.1μF
100
R
1
0.1μF
V
DD
V
-
D
OUT
C
OUT
V
ss
Ct
C
1
C
3
0.01μF
NOTE ON EXTERNAL COMPONENTS
R
1
and C
1
will stabilize a supply voltage to the RN5VM. A recommended R
1
value is less than 1k
.
A larger value of R
1
leads higher detection voltage, makes some errors, because of shoot through current
flowed in the RN5VM.
R
2
and C
2
will stabilize a V- pin voltage. The resetting from over-discharge with connecting charger possibly
be disabled by larger value of R
2
. Recommended value is less than 1k
.
After an over-charge detection, a system may not draw load current when a battery pack is connected to it in
the C version with R2 and C2 time constants at relatively larger settings.
Recommended C
2
value is less than 1μF.
R
1
and R
2
can operate as a current limiter against setting cell reverse direction or for applying excess
charging voltage to the 5VM. While smaller R
1
and R
2
may cause an over power dissipation rating of the
RN5VM and a total of “R
1
+R
2
” should be more than 1k
.
The time constants R
1
×
C
1
or R
2
×
C
2
must have a relations as below:
R
1
×
C
1
R
2
×
C
2
Because in case that R
1
×
C
1
, time constant for V
DD
pin, would be larger than R
2
×
C
2
, time constant for V- pin,
then the RN5VM might be into a standby mode after detecting excess current or short circuit current.
相關(guān)PDF資料
PDF描述
RN5VM112C-TR High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-TSSOP -55 to 125
RN5VM112D High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-TSSOP -55 to 125
RN5VM112D-TR High Speed CMOS Logic Quad D-Type Flip-Flops with 3-State Outputs 16-TSSOP -55 to 125
RN73C2A115KBTG RESISTOR SMD 115K
RN73C2A118KBTG RESISTOR SMD 118K
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