參數(shù)資料
型號: RN2210
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述: 東芝晶體硅外延式進(jìn)步黨(厘進(jìn)程)
文件頁數(shù): 2/5頁
文件大?。?/td> 159K
代理商: RN2210
RN2210,RN2211
2001-06-07
2
Electrical Characteristics (Ta = 25
°°°°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 5V, IC = 0
100
nA
DC current gain
hFE
VCE = 5V, IC = 1mA
120
400
Collector-emitter saturation voltage
VCE (sat)
IC = 5mA, IB = 0.25mA
0.1
0.3
V
Translation frequency
fT
VCE = 10V, IC = 5mA
200
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3
6
pF
RN2210
3.29
4.7
6.11
Input resistor
RN2211
R1
7
10
13
k
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