參數(shù)資料
型號: RN2223
廠商: Toshiba Corporation
英文描述: Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
中文描述: 開關(guān),逆變電路,接口電路及驅(qū)動(dòng)電路應(yīng)用
文件頁數(shù): 1/7頁
文件大小: 329K
代理商: RN2223
RN2221~RN2227
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2221,RN2222,RN2223
RN2224,RN2225,RN2226,RN2227
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l High current type (IC(MAX) = 800mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low VCE (sat)
l Complementary to RN1221~RN1227
Equivalent Circuit
Bias Resistor Values
Maximum Ratings (Ta = 25
°°°°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
RN2221~2227
VCEO
50
V
RN2221~2224
10
RN2225, 2226
5
Emitter-base voltage
RN2227
VEBO
6
V
Collector current
IC
800
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature range
RN2221~2227
Tstg
55~150
°C
JEDEC
EIAJ
TOSHIBA
2-4E1A
Weight: 0.13g
Unit: mm
Type No.
R1 (k)R2 (k)
RN2221
1
RN2222
2.2
RN2223
4.7
RN2224
10
RN2225
0.47
10
RN2226
1
10
RN2227
2.2
10
相關(guān)PDF資料
PDF描述
RN2224 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2225 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2226 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2731B110W TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 12A I(C) | FO-91VAR
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