參數(shù)資料
型號: RN2210
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述: 東芝晶體硅外延式進步黨(厘進程)
文件頁數(shù): 1/5頁
文件大?。?/td> 159K
代理商: RN2210
RN2210,RN2211
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2210,RN2211
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1210, 1211
Equivalent Circuit
Maximum Ratings (Ta = 25
°°°°C)
Characterisstic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
JEDEC
EIAJ
TOSHIBA
2-4E1A
Weight: 0.13g
Unit: mm
相關(guān)PDF資料
PDF描述
RN2211 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2221 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2222 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2223 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2224 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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RN2211 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2213 制造商:OHIO BUCKEYE 功能描述:
RN222 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Current-compensated Chokes
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