參數(shù)資料
型號: RN2209
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述: 東芝晶體硅外延式進步黨(厘進程)
文件頁數(shù): 1/5頁
文件大?。?/td> 173K
代理商: RN2209
RN2207~RN2209
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2207,RN2208,RN2209
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1207~RN1209
Equivalent Circuit and Bias Resistor Values
Maximum Ratings (Ta = 25
°°°°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
RN2207
6
RN2208
7
Emitter-base voltage
RN2209
VEBO
15
V
Collector current
IC
100
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
JEDEC
EIAJ
TOSHIBA
2-4E1A
Weight: 0.13g
Unit: mm
Type No.
R1 (k)R2 (k)
RN2207
10
47
RN2208
22
47
RN2209
47
22
相關PDF資料
PDF描述
RN2210 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2211 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2221 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2222 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2223 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
相關代理商/技術參數(shù)
參數(shù)描述
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RN2210 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
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