參數(shù)資料
型號(hào)： RN2108
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述： 東芝晶體硅外延式進(jìn)步黨（厘進(jìn)程）
文件頁數(shù)： 2/6頁
文件大小： 177K
代理商： RN2108
RN2107 RN2109
2001-06-07
2
Electrical Characteristics
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
=
50V, I
E
= 0
―
―
100
nA
Collector cut-off
current
RN2107
~RN2109
I
CEO
―
V
CE
=
50V, I
B
= 0
―
―
500
nA
RN2107
V
EB
=
6V, I
C
= 0
0.081
―
0.15
RN2108
V
EB
=
7V, I
C
= 0
0.078
―
0.145
Emitter cut-off current
RN2109
I
EBO
―
V
EB
=
15V, I
C
= 0
0.167
―
0.311
mA
RN2107
80
―
―
RN2108
80
―
―
DC current gain
RN2109
h
FE
―
V
CE
=
5V, I
C
=
10mA
70
―
―
―
Collector-emitter
saturation voltage
RN2107
~RN2109
V
CE (sat)
―
I
C
=
5mA, I
B
=
0.25mA
―
0.1
0.3
V
RN2107
0.7
―
1.8
RN2108
1.0
―
2.6
Input voltage (ON)
RN2109
V
I (ON)
―
V
CE
=
0.2V, I
C
=
5mA
2.2
―
5.8
V
RN2107
0.5
―
1.0
RN2108
0.6
―
1.16
Input voltage (OFF)
RN2109
V
I (OFF)
―
V
CE
=
5V, I
C
=
0.1mA
1.5
―
2.6
V
Transition frequency
RN2107
~RN2109
f
T
―
V
CE
=
10V, I
C
=
5mA
―
200
―
MHz
Collector Output
capacitance
RN2107
~RN2109
C
ob
―
V
=
10V, I
E
= 0,
f = 1MH
z
―
3
6
pF
RN2107
7
10
13
RN2108
15.4
22
28.6
Input resistor
RN2109
R1
―
―
32.9
47
61.1
k
RN2107
0.191
0.213
0.232
RN2108
0.421
0.468
0.515
Resistor ratio
RN2109
R1/R2
―
―
1.92
2.14
2.35
―
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