參數(shù)資料
型號(hào)： RN2109
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述： 東芝晶體硅外延式進(jìn)步黨（厘進(jìn)程）
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 177K
代理商： RN2109
RN2107 RN2109
2001-06-07
1
Type No.
R1 (k
)
R2 (k
)
RN2107
10
47
RN2108
22
47
RN2109
47
22
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107,RN2108,RN2109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1107~RN1109
Equivalent Circuit and Bias Resister Values
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN2107~RN2109
V
CEO
50
V
RN2107
6
RN2108
7
Emitter-base voltage
RN2109
V
EBO
15
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
100
mW
Junction temperature
T
j
150
C
Storage temperature range
RN2107~RN2109
T
stg
55~150
C
*: Total rating
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
―
―
2-2H1A
Unit: mm
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